BSC042NE7NS3GATMA1 vs BSC030N03MSGATMA1 比較
詳細並排比較 BSC042NE7NS3GATMA1 由 Infineon 與 BSC030N03MSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC042NE7NS3GATMA1 | BSC030N03MSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC042NE7NS3GATMA1 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | OptiMOS 3 | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 75 V | 30 V |
| Continuous Drain Current (ID) at Ta | 19 A | 21 A |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| RDS(on) max at VGS=10V | 4.2 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | ±20 V |
| Gate Threshold Voltage (VGS(th)) typ | 1.7 V | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| 工作溫度範圍 | -55C to +150C | — |
| 封裝 | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 | — |
| RoHS 狀態 | Compliant | Compliant |
| Series | — | OptiMOS 3M |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Drain-Source On-Resistance (RDS(on)) | — | 3.0 mΩ (typical at VGS=10V) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc=25°C | — | 69 W |
| 工作接面溫度 | — | -55°C to +150°C |
| Drive Voltage (Min/Max RDS(on)) | — | 4.5V / 10V |
| Status | — | Active |