BSC0902NSATMA1 vs BSC027N10NS5ATMA1 比較

詳細並排比較 BSC0902NSATMA1 由 Infineon 與 BSC027N10NS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 BSC0902NSATMA1 BSC027N10NS5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 NRND
電晶體類型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V 100 V
Continuous Drain Current (ID, Ta) 24 A —
Pulsed Drain Current (IDM, Tc) 100 A —
Power Dissipation (Ta) 2.5 W 3 W
Power Dissipation (Tc) 48 W 214 W
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
RDS(on) @ VGS=10V max [DATA_NEEDED: RDS(on) at VGS=10V] —
RDS(on) @ VGS=4.5V max [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Total Gate Charge (Qg typ) [DATA_NEEDED: Qg typical] —
工作溫度範圍 -55C to +150C (Tj) [DATA_NEEDED: Tj min/max]
封裝 PG-TDSON-8-6 (SuperSO8) PG-TSON-8-3 (SuperSO8 5x6 mm)
安裝類型 Surface Mount Surface Mount
Qualification JEDEC qualified for target applications Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)
RoHS Compliance Compliant (Pb-free lead plating) —
無鹵素 Yes, per IEC 61249-2-21 —
Avalanche Rated Yes (100% avalanche tested) —
Manufacturer — Infineon Technologies
Part Number — BSC027N10NS5ATMA1
Technology — OptiMOS 5 (100V)
Channel Type — N-Channel
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta — 23 A
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — 194 A
On-Resistance RDS(on) Max at VGS=10V — 2.7 mOhm
RoHS 狀態 — Compliant
MSL 等級 — [DATA_NEEDED: MSL rating]

資料表與資源

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