BSC150N03LDGATMA1 vs BSC027N04LSGATMA1 比較
詳細並排比較 BSC150N03LDGATMA1 由 Infineon 與 BSC027N04LSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC150N03LDGATMA1 | BSC027N04LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| Configuration | Dual N-Channel MOSFET Array (half-bridge) | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Id) @ TA=25C | 20 A | — |
| Continuous Drain Current (Id) @ TA=70C | [DATA_NEEDED: Id at TA=70C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm] | — |
| Gate-Source Voltage (Vgs) | ±20 V | — |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.5 V | — |
| On-State Resistance (Rds(on)) @ Vgs=10V | [DATA_NEEDED: typical Rds(on) mOhm] | — |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | [DATA_NEEDED: typical Rds(on) mOhm] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg nC] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: typical Qgd nC] | — |
| Output Charge (Qoss) | [DATA_NEEDED: typical Qoss nC] | — |
| Power Dissipation (Pd) | 26 W | — |
| 工作接面溫度 | -55C to +150C | — |
| 封裝 | PG-TDSON-8-4 (5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 | 1 |
| RoHS 狀態 | Compliant | Compliant |
| 無鹵素 | Yes | Yes |
| Product Family | — | OptiMOS 3 |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 24 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 2.7 mΩ |
| Power Dissipation (Ta=25°C) | — | 2.5 W |
| 功率耗散 (TC=25°C) | — | 83 W |
| 工作溫度範圍 | — | -55°C to +150°C |
| Technology | — | OptiMOS 3 (Trench) |