BSC190N15NS3GATMA1 vs BSC070N10NS5ATMA1 比較
詳細並排比較 BSC190N15NS3GATMA1 由 Infineon 與 BSC070N10NS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 ✓ 啟用中
規格比較
| 參數 | BSC190N15NS3GATMA1 | BSC070N10NS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | OptiMOS 3 (N-Channel) | OptiMOS 5 (N-channel trench) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at Tc=25C | 50 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | 20 V | 20 V |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V | [DATA_NEEDED: typical VGS(th) value] |
| On-Resistance RDS(on) max at VGS=10V | 19 mOhm | — |
| On-Resistance RDS(on) typ at VGS=10V | [DATA_NEEDED: RDS(on) typical at 10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: typical Qg] |
| Power Dissipation (PD) at Tc=25C | 125 W | — |
| 工作溫度範圍 | -55 C to +150 C | — |
| 封裝 | PG-TDSON-8-1 (TDSON-8 EP) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 | 1 (per JEDEC J-STD-020) |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 80 A |
| RDS(on) max @ VGS=10V | — | 7 mOhm |
| Power Dissition at TC=25C (Ptot) | — | 83 W |
| Power Dissipation at TA=25C | — | 2.5 W |
| 工作接面溫度範圍 | — | -55 C to +150 C |
| Lead-Free | — | Yes |
| Typical Application | — | Synchronous rectification in SMPS |