BSC360N15NS3GATMA1 vs BSC0993NDATMA1 比較

詳細並排比較 BSC360N15NS3GATMA1 由 Infineon 與 BSC0993NDATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 BSC360N15NS3GATMA1 BSC0993NDATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC360N15NS3GATMA1 —
Technology OptiMOS 3 (N-Channel Trench MOSFET) OptiMOS 5 trench MOSFET
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at Tc 33 A —
On-Resistance RDS(on) max at VGS=10V 36 mOhm —
Power Dissipation (PD) at Tc 74 W —
Gate Threshold Voltage (VGS th) typ 3.0 V —
Total Gate Charge (Qg) typ [DATA_NEEDED: Qg value] —
封裝 PG-TDSON-8-1 (SuperSO8, 5x6 mm) PG-TISON-8
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55°C to +150°C (junction) -55C to +150C (junction)
Avalanche Energy Rated Yes —
RoHS 狀態 Compliant Compliant
Lead-Free Yes Yes
MSL 等級 1 [DATA_NEEDED: MSL level]
Product Series — OptiMOS 5 30V
Configuration — Dual N-Channel (Array)
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Id) @ Ta — 17 A
Channel Mode — Enhancement
ESD Protection — Yes (integrated)
Rds(on) max @ Vgs=10V — [DATA_NEEDED: Rds(on) value]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]

資料表與資源

瀏覽所有產品 建立 BOM 索取報價