BSS119NH6327XTSA1 vs 2N7002H6327XTSA2 比較
詳細並排比較 BSS119NH6327XTSA1 由 Infineon 與 2N7002H6327XTSA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSS119NH6327XTSA1 | 2N7002H6327XTSA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| FET Technology | Enhancement-mode, planar N-channel | — |
| Drain-Source Voltage (VDS) max | 100 V | — |
| Continuous Drain Current (ID) at TA=25°C | 190 mA | — |
| Power Dissipation (PD) at TA=25°C | 500 mW | — |
| Drain-Source On-Resistance (RDS(on)) max | 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value] | — |
| Gate Threshold Voltage (VGS(th)) | 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max] | [DATA_NEEDED: VGS(th) typical value] |
| Gate Drive Voltage (VGS) | ±20 V max | — |
| 封裝 | PG-SOT23 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet] | -55C to +150C (Tj) |
| Qualification | AEC-Q101 (automotive grade) | Industrial / Commercial Grade |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Packaging | Tape & Reel (3,000 pcs/reel) | — |
| MSL 等級 | 1 [DATA_NEEDED: confirm from datasheet] | 1 (per JEDEC J-STD-020) |
| Technology | — | OptiMOS (Planar) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 300 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | — | 3 ohm max @ VGS = 10 V |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Channel Mode | — | Enhancement |