BSS214NH6327XTSA1 vs BSP149H6327XTSA1 比較
詳細並排比較 BSS214NH6327XTSA1 由 Infineon 與 BSP149H6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSS214NH6327XTSA1 | BSP149H6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 20 V | — |
| Continuous Drain Current (ID) | 1.5 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| Drain-Source On-Resistance (RDS(on) max) | 250 mOhm at VGS = 4.5 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | — |
| Gate-Source Voltage (VGS max) | ±12 V (recommended) | — |
| Technology | OptiMOS 2 (planar N-channel) | SIPMOS |
| 封裝 | SOT-23 (PG-SOT23), 3 pins | PG-SOT223-4 (SOT-223-4) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +150C (junction) | — |
| Qualification | AEC-Q101 (Automotive) | — |
| Lead Finish | Pb-free lead plating (matte tin) | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| ESD Protection | Yes (gate ESD diode) | — |
| Transistor Polarity | — | N-Channel |
| Mode of Operation | — | Depletion Mode (normally ON) |
| Drain-Source Voltage VDS | — | 200 V |
| Continuous Drain Current ID | — | 660 mA (Ta) |
| Power Dissipation PD | — | 1.8 W (Ta) |
| On-State Resistance RDS(on) | — | 1 ohm (typ) |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: max VGS rating] |
| 工作溫度 | — | -55 C to +150 C (Tj) |
| Channel Count | — | 1 |
| 腳位數 | — | 4 (G, D, S, tab) |
| Configuration | — | Single |