BSS214NWH6327XTSA1 vs BSP296NH6327XTSA1 比較

詳細並排比較 BSS214NWH6327XTSA1 由 Infineon 與 BSP296NH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 ✓ 啟用中
Infineon
BSP296NH6327XTSA1 BSP296NH6327XTSA1 - 100V N-Ch MOSFET, 1.2A, SOT-223 | Infineon

BSP296NH6327XTSA1 - 100V N-Ch MOSFET, 1.2A, SOT-223 | Infineon

BSP296NH6327XTSA1 ✓ 啟用中

規格比較

參數 BSS214NWH6327XTSA1 BSP296NH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSS214NWH6327XTSA1 BSP296NH6327XTSA1
Series OptiMOS —
FET Type N-Channel N-Channel, Enhancement Mode
Technology MOSFET (Metal Oxide) Trench MOSFET
Drain-to-Source Voltage (Vdss) 20 V —
Continuous Drain Current (Id) @ 25C 1.5 A —
Rds(on) Max @ Vgs=4.5V 250 mOhm —
Drive Voltage (Max Rds On, Min Rds On) 2.5 V, 4.5 V —
Power Dissipation (Pd) @ Ta=25C 500 mW —
封裝 PG-SOT323 (SOT-323-3) PG-SOT223-4 (4-pin, 3 leads + tab)
安裝類型 Surface Mount Surface Mount
工作溫度 -55C to +150C (junction) —
Qualification AEC-Q101 (Automotive) AEC-Q101 (Automotive)
RoHS 狀態 Compliant Compliant
Lead-Free Yes Yes
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Ta=25C — 1.2 A
Power Dissipation (PD) at Ta=25C — 1.8 W
On-Resistance RDS(on) max — 600 mOhm
工作溫度範圍 — -55C to +150C (junction)
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical value]
MSL 等級 — 1 (per JEDEC J-STD-020)
Standard Packaging — Tape & Reel, 1000 pcs/reel

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