BSS214NWH6327XTSA1 vs BSS606NH6327XTSA1 比較

詳細並排比較 BSS214NWH6327XTSA1 由 Infineon 與 BSS606NH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 ✓ 啟用中
Infineon
BSS606NH6327XTSA1 BSS606NH6327XTSA1 - 60V 3.2A N-Ch MOSFET, SOT-89 | Infineon

BSS606NH6327XTSA1 - 60V 3.2A N-Ch MOSFET, SOT-89 | Infineon

BSS606NH6327XTSA1 ✓ 啟用中

規格比較

參數 BSS214NWH6327XTSA1 BSS606NH6327XTSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSS214NWH6327XTSA1 —
Series OptiMOS —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain-to-Source Voltage (Vdss) 20 V —
Continuous Drain Current (Id) @ 25C 1.5 A —
Rds(on) Max @ Vgs=4.5V 250 mOhm —
Drive Voltage (Max Rds On, Min Rds On) 2.5 V, 4.5 V —
Power Dissipation (Pd) @ Ta=25C 500 mW —
封裝 PG-SOT323 (SOT-323-3) PG-SOT-89 (TO-243AA)
安裝類型 Surface Mount Surface Mount
工作溫度 -55C to +150C (junction) —
Qualification AEC-Q101 (Automotive) Automotive (per family page)
RoHS 狀態 Compliant Compliant
Lead-Free Yes Yes
Product Family — OptiMOS Small Signal/Power
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) — 3.2 A (Ta)
Power Dissipation (PD) — 1 W (Ta)
On-Resistance (RDS(on)) — 60 mΩ max @ VGS=10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
工作接面溫度 — -55°C to +150°C
MSL 等級 — 1 (per SOT-89 family standard)
Reel Quantity — 1000 pcs

資料表與資源

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