FDV301N vs 2N7002LT1G 比較

詳細並排比較 FDV301N 由 onsemi 與 2N7002LT1G 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

onsemi
2N7002LT1G 2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G - 60V N-Channel MOSFET SOT-23 | onsemi

2N7002LT1G ✓ 啟用中

規格比較

參數 FDV301N 2N7002LT1G
品牌 onsemi onsemi
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel Enhancement Mode MOSFET (Digital FET) —
Drain-Source Voltage (Vdss) 25 V —
Continuous Drain Current (Id) 220 mA (Ta) —
Peak Drain Current 0.5 A —
RDS(on) at VGS = 2.7 V 5 ohm (typical) —
RDS(on) typical 4 ohm —
Power Dissipation (Pd) 350 mW (Ta) —
Technology High cell density DMOS MOSFET
Gate Drive Type Logic level (no bias resistors required) —
安裝類型 Surface Mount Surface Mount
封裝 SOT-23-3 SOT-23-3 (TO-236)
工作溫度 [DATA_NEEDED: operating temperature range] —
Gate-Source Voltage (Vgs) Max [DATA_NEEDED: maximum gate-source voltage] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Input Capacitance (Ciss) [DATA_NEEDED: input capacitance] —
Thermal Resistance (RthJA) [DATA_NEEDED: thermal resistance junction to ambient] —
RoHS 狀態 [DATA_NEEDED: RoHS compliance status] —
MSL 等級 [DATA_NEEDED: moisture sensitivity level] —
Polarity — N-Channel
Channel Mode — Enhancement Mode
Drain-Source Voltage VDSS — 60 V
Continuous Drain Current ID — 115 mA (Tc)
Power Dissipation PD — 225 mW (Ta)
Maximum RDS(on) — 7.5 ohm @ VGS = 5 V
Configuration — Single FET
腳位數 — 3
類別 — Small Signal MOSFET
Manufacturer — onsemi (ON Semiconductor)
Lead Finish — [DATA_NEEDED: lead finish/plating]
工作溫度範圍 — [DATA_NEEDED: operating temperature range]
Packaging — [DATA_NEEDED: packaging type]

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