H5AN4G6NBJR-PBC vs H5AN4G6NBJR-RDC 比較
詳細並排比較 H5AN4G6NBJR-PBC 由 SK hynix 與 H5AN4G6NBJR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN4G6NBJR-PBC | H5AN4G6NBJR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 4 Gbit | — |
| 組織 | 256M x 16 (268435456 words x 16 bits) | 256M x 16 |
| Supply Voltage (VDD) | 1.2 V | — |
| 介面 | DDR4 (double data rate, synchronous) | CMOS, fully synchronous |
| Package Code | TFBGA | TFBGA (FBGA-96) |
| 封裝 | FBGA-96 (PBGA96), rectangular | — |
| Number of Terminals | 96 | 96 |
| 安裝類型 | Surface Mount | Surface Mount |
| 功能特色 | Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC | — |
| 工作溫度 | [DATA_NEEDED: temperature range for -C grade] | — |
| Data Rate / Speed Grade | [DATA_NEEDED: speed grade PBC data rate] | — |
| CAS 延遲 | [DATA_NEEDED: CAS latency for PBC speed grade] | — |
| Process | CMOS | — |
| Lead-Free / Halogen-Free | Yes (per family datasheet, Lead-Free & Halogen-Free) | Yes (per datasheet cover: Lead-Free & Halogen-Free) |
| Temperature Grade | OTHER (per distributor listing) | OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet |
| Density | — | 4 Gb |
| 供應電壓 | — | 1.2 V |
| Package Shape | — | Rectangular |
| Package Width | — | 7.5 mm |
| Self Refresh | — | Auto / Self Refresh |
| Data Mask Function | — | Yes |
| Asynchronous Reset | — | Yes |
| On-Die Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Speed Grade | — | -RDC (see manufacturer datasheet for validated data-rate bin) |