H5AN8G6NAFR-UHC vs H5AN8G6NAFR-RDC 比較

詳細並排比較 H5AN8G6NAFR-UHC 由 SK hynix 與 H5AN8G6NAFR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5AN8G6NAFR-UHC H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 2400MT/s | SK Hynix

H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 2400MT/s | SK Hynix

H5AN8G6NAFR-UHC ✓ 啟用中
SK hynix
H5AN8G6NAFR-RDC H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

H5AN8G6NAFR-RDC ✓ 啟用中

規格比較

參數 H5AN8G6NAFR-UHC H5AN8G6NAFR-RDC
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM (CMOS) DDR4 SDRAM
Memory Density 8 Gbit 8 Gb
組織 512M x 16 512M x 16
供應電壓 1.2 V 1.2 V
資料速率 2400 MT/s —
Clock Architecture Differential clock (CK_t / CK_c), fully synchronous —
封裝 96-ball FBGA (TFBGA) —
安裝類型 Surface Mount Surface Mount
工作溫度 0C to +85C [DATA_NEEDED: operating temperature range]
Refresh Auto self-refresh —
Precharge Auto precharge function —
Reset Asynchronous reset function —
Data Mask DM function supported —
Termination Dynamic on-chip termination (ODT) —
Calibration ZQ calibration function —
Error Checking CRC function —
Write Leveling Write leveling function supported —
RoHS 狀態 [DATA_NEEDED: RoHS status] Compliant (Lead-Free & Halogen-Free)
介面 — DDR4 (JEDEC-standard)
Access Mode — Multi Bank Page Burst
Package Code — TFBGA
Package Shape — Rectangular
Number of Terminals — 96
Temperature Grade — OTHER (per Partstack listing)
Technology — CMOS
Speed Grade — -RDC (see datasheet for bin timing)
Family — H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC
Max Clock Rate — [DATA_NEEDED: max clock rate for -RDC bin]

資料表與資源

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