H5AN8G6NDJR-XNC vs K4A8G165WC-BCRC 比較
詳細並排比較 H5AN8G6NDJR-XNC 由 SK hynix 與 K4A8G165WC-BCRC 由 Samsung Electro-Mechanics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electro-Mechanics
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WC-BCRC ✓ 啟用中規格比較
| 參數 | H5AN8G6NDJR-XNC | K4A8G165WC-BCRC |
|---|---|---|
| 品牌 | SK hynix | Samsung Electro-Mechanics |
| 類別 | Memory ICs | EEPROM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | — | In Stock |
| 單價 (USD) | $55.68 | $19.69 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gb | 8 Gbit |
| Memory Organization | 512M x16 | — |
| 資料速率 | 3200 Mbps | 2400 Mbps |
| Supply Voltage (VDD) | 1.2 V (max 1.26 V) | — |
| 封裝 | FBGA-96 (13x7.5 mm) | 96-FBGA (TFBGA) |
| Number of Terminals | 96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Input/Output Type | COMMON | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| 無鹵素 | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Data Mask | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| Asynchronous Reset | Yes | — |
| 組織 | — | 512M x 16 |
| Clock Frequency | — | 1333 MHz |
| 供應電壓 | — | 1.2 V (1.14 V to 1.26 V) |
| 介面 | — | Parallel, 16-bit DDR |
| Standby Current (Idle) | — | 2 mA |
| Operating Current | — | 64 mA |
| 工作溫度 | — | 0 C to +95 C |
| 安裝類型 | — | Surface Mount |
| 功能特色 | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Die Generation | — | C-die |
| Memory Format | — | DRAM |
| RoHS 狀態 | — | Compliant |