H5AN8G8NAFR-VKC vs H5AN8G8NAFR-UHI 比較
詳細並排比較 H5AN8G8NAFR-VKC 由 SK hynix 與 H5AN8G8NAFR-UHI 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G8NAFR-VKC | H5AN8G8NAFR-UHI |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| 組織 | 1G x 8 | 1G x 8 |
| Speed Grade | DDR4-2666 (VKC bin) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| 介面 | SSTL12 | DDR4 (JEDEC-class) |
| Burst Length | 8 (BL8) | — |
| Bank Group Architecture | Supported (per DDR4 JEDEC architecture) | — |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes (DLL for output skew control) | — |
| 封裝 | 78-ball FBGA | 78-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS 狀態 | Compliant (Lead-Free & Halogen-Free) | Compliant |
| Process Technology | CMOS | — |
| Recommended Application | Main memory requiring large density and high bandwidth | — |
| Memory Density | — | 8 Gb |
| 資料速率 | — | DDR4-2400 (PC2400), 1200 MHz clock |
| 供應電壓 | — | 1.2 V |
| Lead Free | — | Yes |
| 無鹵素 | — | Yes |
| Technology | — | CMOS |
| Application | — | Main memory (high density, high bandwidth) |
| CAS 延遲 | — | [DATA_NEEDED: CAS latency for UHI speed grade] |
| Refresh | — | [DATA_NEEDED: refresh specification] |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |