H5AN8G8NCJR-UHC vs H5AN8G8NCJR-RDC 比較

詳細並排比較 H5AN8G8NCJR-UHC 由 SK hynix 與 H5AN8G8NCJR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5AN8G8NCJR-UHC H5AN8G8NCJR-UHC - 8Gb DDR4-2400 SDRAM FBGA-78 | SK hynix

H5AN8G8NCJR-UHC - 8Gb DDR4-2400 SDRAM FBGA-78 | SK hynix

H5AN8G8NCJR-UHC ✓ 啟用中
SK hynix
H5AN8G8NCJR-RDC H5AN8G8NCJR-RDC - 8Gb DDR4 SDRAM x8 2666Mbps | SK Hynix

H5AN8G8NCJR-RDC - 8Gb DDR4 SDRAM x8 2666Mbps | SK Hynix

H5AN8G8NCJR-RDC ✓ 啟用中

規格比較

參數 H5AN8G8NCJR-UHC H5AN8G8NCJR-RDC
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb (1 GB)
組織 1G x 8 x8
Speed Grade DDR4-2400 (PC4-19200) —
Supply Voltage (VDD) 1.2 V —
封裝 FBGA-78 78-ball FBGA
安裝類型 Surface Mount (BGA) Surface Mount
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range for -RDC suffix]
RoHS Code Yes —
REACH Compliance Yes (per distributor record) —
Lead-Free Yes (family documented as Lead-Free & Halogen-Free) —
無鹵素 Yes —
Part Life Cycle Code Active —
Access Type Synchronous, both clock edges (DDR) —
Memory Configuration Bank-group architecture DDR4 —
Die Revision CJR (C-die family) —
Manufacturer SK hynix Inc. —
資料速率 — up to 2666 Mbps
供應電壓 — 1.2 V (VDD)
介面 — DDR4 (JEDEC standard)
Bank Architecture — 4 bank groups x 4 banks
Burst Length — BL8
CAS 延遲 — [DATA_NEEDED: CAS latency for -RDC speed grade]
Generation — C-die family (NCJR)
Lead Free — Yes
無鹵素 — Yes
RoHS 狀態 — Compliant

資料表與資源

瀏覽所有產品 建立 BOM 索取報價