H5AN8G8NCJR-VKC vs H5AN8G8NCJR-XNC 比較
詳細並排比較 H5AN8G8NCJR-VKC 由 SK hynix 與 H5AN8G8NCJR-XNC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G8NCJR-VKC | H5AN8G8NCJR-XNC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $30.69 |
| 記憶體類型 | DDR4 SDRAM (volatile) | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit | 8 Gbit |
| Memory Organization | 1G x 8 | — |
| 資料速率 | 2666 Mbps/pin | 3200 Mbps (DDR4-3200) |
| Clock Frequency | 1.6 GHz | 1.6 GHz |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (1.2 V class) | — |
| Operating Current (typ) | 30 mA | — |
| Standby Current (typ) | 3 mA | — |
| 工作溫度 | 0C to +85C | 0 C to +85 C |
| 封裝 | FBGA-78 (78-ball fine-pitch BGA) | 78-ball FBGA, 7.5 mm x 11 mm |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | Parallel (DDR4) | DDR4 (8-bit data interface) |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| RoHS 狀態 | Compliant | Compliant |
| CAS 延遲 | [DATA_NEEDED: CAS Latency] | — |
| Refresh Rate | [DATA_NEEDED: refresh period] | — |
| 組織 | — | 1 Gb x 8 |
| 供應電壓 | — | 1.14 V to 1.26 V (1.2 V nominal) |
| Architecture | — | Bank-group based DDR4 |
| Refresh | — | Auto self-refresh |
| Precharge | — | Auto precharge |
| On-Chip Termination | — | Dynamic ODT |
| Calibration | — | ZQ calibration, write leveling |
| Error Handling | — | CRC function |
| Reset | — | Asynchronous reset |
| Data Mask | — | Data mask function |
| Current - Operating | — | 39 mA |
| Current - Standby | — | 30 mA |
| Lead-Free / Halogen-Free | — | Yes |