H5ANAG6NBJR-PBC vs H5AN4G6NBJR-VKC 比較
詳細並排比較 H5ANAG6NBJR-PBC 由 SK hynix 與 H5AN4G6NBJR-VKC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5ANAG6NBJR-PBC | H5AN4G6NBJR-VKC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb (2 GB) | — |
| 供應電壓 | 1.2 V | — |
| Generation Max Data Rate | 3200 MT/s (family max) | — |
| 封裝 | FBGA-96 | FBGA-96 / TFBGA (PBGA96) |
| 安裝類型 | Surface Mount | Surface Mount |
| Self Refresh | Auto self-refresh | — |
| Data Mask Function | Yes | — |
| Asynchronous Reset | Yes | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| 工作溫度 | [DATA_NEEDED: Operating Temperature] | -40C to +95C |
| Speed Bin (PBC) | [DATA_NEEDED: Speed grade MT/s] | — |
| 組織 | [DATA_NEEDED: Organization x16/x8] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS Status] | Compliant |
| 記憶體容量 | — | 4 Gbit |
| Memory Organization | — | 256M x 16 |
| 資料速率 | — | 2666 Mbps |
| Clock Frequency | — | 1.6 GHz (internal reference per distributor data) |
| Supply Voltage (VDD) | — | 1.2 V nominal (1.14 V to 1.26 V) |
| Operating Current | — | 38 mA (typical, per distributor data) |
| 介面 | — | Parallel |
| Technology | — | CMOS |
| Body Size | — | 13 mm, 1.2 mm profile, 0.8 mm ball pitch |
| Termination | — | Dynamic on-chip termination (ODT) |
| Calibration | — | ZQ calibration; write leveling |
| Protection Functions | — | Asynchronous reset; CRC; data mask |
| Refresh | — | Auto self-refresh |
| Packaging | — | Tray |