H5ANAG6NCR-RDC vs H5ANAG6NAMR-UHC 比較

詳細並排比較 H5ANAG6NCR-RDC 由 SK hynix 與 H5ANAG6NAMR-UHC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5ANAG6NCR-RDC H5ANAG6NCR-RDC - 16Gb DDR4 SDRAM 3200Mbps x16 | SK Hynix

H5ANAG6NCR-RDC - 16Gb DDR4 SDRAM 3200Mbps x16 | SK Hynix

H5ANAG6NCR-RDC ✓ 啟用中
SK hynix
H5ANAG6NAMR-UHC H5ANAG6NAMR-UHC - 16Gb DDR4-2400 SDRAM x16 1.2V | SK hynix

H5ANAG6NAMR-UHC - 16Gb DDR4-2400 SDRAM x16 1.2V | SK hynix

H5ANAG6NAMR-UHC ✓ 啟用中

規格比較

參數 H5ANAG6NCR-RDC H5ANAG6NAMR-UHC
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
記憶體容量 16 Gb (2 GB) —
組織 1G x 16 1G x 16
資料速率 3200 Mbps (PC4-25600 class) —
Supply Voltage (VDD) 1.2 V 1.2 V
封裝 96-ball FBGA FBGA-96 (PBGA96)
Package Body Rectangular, 8 mm width —
Maximum Standby Current 0.074 A —
安裝類型 Surface Mount Surface Mount (BGA solder ball)
Number of Terminals (Balls) 96 —
Auto Self-Refresh Yes —
Auto Precharge Yes —
Asynchronous Reset Yes —
Data Mask (DM) Function Yes —
Dynamic On-Chip Termination (ODT) Yes —
ZQ Calibration Yes —
CRC Function Yes —
Write Leveling Yes —
RoHS 狀態 [DATA_NEEDED: RoHS Status] [DATA_NEEDED: RoHS status]
工作溫度 [DATA_NEEDED: Operating Temperature Range] [DATA_NEEDED: operating temperature range]
Refresh Interval [DATA_NEEDED: Refresh Interval] —
Memory Density — 16 Gbit (2 GB)
Speed Grade / Data Rate — DDR4-2400 (UHC bin, PC4-19200)
Architecture — CMOS DDR4 with bank groups
Power Class — Normal Power
Refresh — Self-refresh and auto-refresh (DDR4 standard 64 ms)
CAS 延遲 — [DATA_NEEDED: CL for UHC bin]
介面類型 — Parallel, synchronous, double data rate
Available Speed Bins (family) — PB / RD / TF / UH / VK
Application Class — Main memory, embedded, industrial
生命週期狀態 — Active production

資料表與資源

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