IAUC60N04S6N031HATMA1 vs IAUC100N04S6L014ATMA1 比較
詳細並排比較 IAUC60N04S6N031HATMA1 由 Infineon 與 IAUC100N04S6L014ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUC60N04S6N031HATMA1 | IAUC100N04S6L014ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | IAUC (Integrated Automotive Half-Bridge) | IAUC / OptiMOS 6 40V |
| Process Technology | OptiMOS 6 40V | — |
| Configuration | Half-Bridge (2 N-Channel MOSFETs) | — |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Continuous Drain Current (I_D, Tj) | 60 A | — |
| Power Dissipation (P_D, Tc=25C) | 75 W | — |
| R_DS(on) at VGS=10V | 3.1 mΩ | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | [DATA_NEEDED: V_GS max rating] |
| 工作溫度範圍 | -55 °C to +175 °C (Tj) | -55C to +175C |
| 封裝 | PG-TDSON-8-56 (5 mm x 6 mm) | PG-TDSON-8 (SuperSO8, 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 8 | — |
| Automotive Qualification | AEC-Q101 | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | [DATA_NEEDED: MSL rating] | 1 |
| 電晶體類型 | — | N-Channel MOSFET |
| Mode | — | Enhancement |
| Continuous Drain Current (I_D, Tc) | — | 100 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) max (V_GS=10V) | — | 1.4 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G typical] |
| Power Dissipation (P_D, Tc) | — | 100 W |
| AEC-Q101 Qualification | — | Yes |
| Technology | — | OptiMOS 6 |
| Packaging | — | Tape & Reel (ATMA1 suffix) |