IAUCN04S7N056DATMA1 vs IAUCN04S7N019GATMA1 比較

詳細並排比較 IAUCN04S7N056DATMA1 由 Infineon 與 IAUCN04S7N019GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUCN04S7N056DATMA1 IAUCN04S7N056DATMA1 - 40V N-Channel MOSFET 5.6mΩ | Infineon

IAUCN04S7N056DATMA1 - 40V N-Channel MOSFET 5.6mΩ | Infineon

IAUCN04S7N056DATMA1 ✓ 啟用中

規格比較

參數 IAUCN04S7N056DATMA1 IAUCN04S7N019GATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUCN04S7N056DATMA1 —
Series OptiMOS 5 40V —
電晶體類型 N-Channel MOSFET N-Channel MOSFET
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) 60 A (Tj) —
RDS(on) (typ) 5.59 mΩ —
Power Dissipation (Pd) 41 W (Tc) —
工作溫度範圍 -55°C to +175°C [DATA_NEEDED: junction temperature range from datasheet]
封裝 PG-TDSON-8-61 (TDSON EP, 5x6 mm) PG-THSOG-4-1 (SSO4G 5x6 mm)
安裝類型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101 (per family datasheet)
Technology OptiMOS 5 trench MOSFET —
RoHS 狀態 Compliant Compliant
Packaging Type Tape & Reel —
Product Family — OptiMOS 7
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 147 A
On-Resistance RDS(on) typical — 1.95 mOhm
Maximum Power Dissipation (Tc) — 81 W
Substrate Compatibility — IMS substrates and legacy PCB
Lead-Free — Yes
Tape and Reel Packaging — Yes (per ATMA1 suffix)

資料表與資源

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