IAUCN10S5L110TATMA1 vs IAUC100N10S5L054ATMA1 比較
詳細並排比較 IAUCN10S5L110TATMA1 由 Infineon 與 IAUC100N10S5L054ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUCN10S5L110TATMA1 | IAUC100N10S5L054ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 5 (IAUC automotive family) |
| Technology | N-Channel MOSFET, Trench, Logic Level | OptiMOS 5 trench |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tj | 61 A | — |
| On-Resistance RDS(on) max at VGS=10V | 11.3 mΩ | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage rating] | — |
| Power Dissipation (PD) at Tc | 88 W | — |
| 工作接面溫度 | -55 °C to +175 °C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| 封裝 | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled | PG-TDSON-8-34 (surface mount) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | MSL1 (260°C peak reflow) | [DATA_NEEDED: MSL rating] |
| Avalanche Rated | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 Extended Qualification | — |
| RoHS 狀態 | Compliant | Compliant |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-to-Source Voltage (V_DS) | — | 100 V |
| Gate-to-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS value] |
| Continuous Drain Current (I_D, Tj) | — | 101 A |
| Power Dissipation (P_D, Tc) | — | 130 W |
| R_DS(on) max at V_GS=10V | — | 5.4 mΩ |
| 工作溫度範圍 | — | -55°C to +175°C |
| Qualification | — | AEC-Q101 (automotive) |