IAUZN08S7L177ATMA1 vs IAUC120N04S6N010ATMA1 比較
詳細並排比較 IAUZN08S7L177ATMA1 由 Infineon 與 IAUC120N04S6N010ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUZN08S7L177ATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | OptiMOS 7 N-channel power MOSFET | OptiMOS 6 |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) | 35 A (Tj) | — |
| Power Dissipation (PD) | 45 W (Tc) | — |
| On-Resistance (RDS(on)) | 17.7 mΩ max | — |
| 封裝 | PG-TSDSON-8-44 (S3O8, 3x3 mm²) | PG-TDSON-8-34 (5x6 mm leadless) |
| 安裝類型 | Surface Mount | Surface Mount |
| Polarity | N-Channel | Single N-channel |
| 工作溫度 | -55C to +175C (Tj, automotive grade) | — |
| Configuration | Single | — |
| Qualification | AEC-Q101 automotive | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Lead-Free | Yes | — |
| RoHS 狀態 | Compliant | Compliant |
| Family | Infineon OptiMOS 7 automotive, 80 V | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| Automotive Qualification | — | AEC-Q101 |
| 工作溫度範圍 | — | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |