IHW40N120R5XKSA1 vs IPP100N12S305AKSA2 比較

詳細並排比較 IHW40N120R5XKSA1 由 Infineon 與 IPP100N12S305AKSA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IHW40N120R5XKSA1 IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 ✓ 啟用中

規格比較

參數 IHW40N120R5XKSA1 IPP100N12S305AKSA2
品牌 Infineon Infineon
類別 IGBTs MOSFETs
生命週期狀態 啟用中 啟用中
Collector-Emitter Voltage (VCE) 1200 V —
Continuous Collector Current (IC, TC=25C) 80 A —
Pulsed Collector Current (ICM) 160 A —
Maximum Power Dissipation (Ptot) 394 W —
Gate-Emitter Voltage (VGE) +/-20 V —
VCE(sat) at IC=40A, VGE=15V, Tj=25C [DATA_NEEDED: typical VCE(sat) value] —
Integrated Anti-Parallel Diode Yes (monolithic reverse-conducting) —
Technology Trench Field Stop, Reverse-Conducting RC-H5 —
封裝 TO-247-3 (PG-TO247-3) through-hole PG-TO220-3-1 (Through Hole)
安裝類型 Through Hole Through Hole
工作接面溫度 -40C to +175C —
Storage Temperature -55C to +150C —
Soldering Temperature (max 10s) 260 C —
Switching Application Resonant / soft switching (induction cooking optimized) —
RoHS Compliance Compliant —
無鹵素 Yes —
MSL 等級 N/A (through-hole) N/A (Through Hole)
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5
FET Type — N-Channel
Drain-Source Voltage (VDS) — 120 V
Continuous Drain Current (ID, TC=25C) — 100 A
Continuous Drain Current (ID, TC=100C) — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD, TC=25C) — 300 W
On-State Resistance R_DS(on) max @ VGS=10V — [DATA_NEEDED: R_DS(on) max]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th)]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: total gate charge]
Total Gate Charge Qg — [DATA_NEEDED: Qg value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
工作溫度範圍 — -55C to +175C (TJ)
腳位數 — 3 (Gate, Drain, Source)
RoHS 狀態 — Compliant
Avalanche Energy Rated — Yes (single-pulse)

資料表與資源

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