IPB60R190C6ATMA1 vs IPA60R190C6 比較
詳細並排比較 IPB60R190C6ATMA1 由 Infineon 與 IPA60R190C6 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPB60R190C6ATMA1 | IPA60R190C6 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | CoolMOS C6 Superjunction N-Channel MOSFET | Superjunction (SJ) / CoolMOS |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | — |
| Power Dissipation (PD) at Tc=25C | 151 W | — |
| On-Resistance RDS(on) max at VGS=10V | 190 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typ) | — |
| Total Gate Charge (Qg) typ | 32 nC | — |
| 工作溫度範圍 | -55C to +150C | -55C to +150C |
| 封裝 | PG-TO263-3 (D2PAK) | TO-220 FullPAK (TO-220FP-3) |
| 安裝類型 | Surface Mount | Through-Hole (isolated tab) |
| 腳位數 | 3 (Gate, Drain, Source) | — |
| MSL 等級 | 1 | — |
| RoHS 狀態 | Compliant | Compliant |
| Avalanche Energy Rated | Yes (EAS per datasheet) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS C6 |
| Continuous Drain Current (ID) at TC=25C | — | 20.2 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 190 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Gate-Source Voltage VGS max | — | +/- 20 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg typ] |
| Rise Time tr typ | — | [DATA_NEEDED: tr] |
| Fall Time tf typ | — | [DATA_NEEDED: tf] |
| Avalanche Energy EAS | — | [DATA_NEEDED: EAS] |
| Power Dissipation Ptot at TC=25C | — | [DATA_NEEDED: Ptot] |
| Channel Type | — | N-Channel enhancement mode |
| Channel Polarity | — | N-Channel |