IPB70N10S3L12ATMA2 vs IPB70N10S3L12ATMA1 比較
詳細並排比較 IPB70N10S3L12ATMA2 由 Infineon 與 IPB70N10S3L12ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPB70N10S3L12ATMA1 - 100V 70A 11.8mΩ OptiMOS N-Ch MOSFET | Infineon
IPB70N10S3L12ATMA1 ✓ 啟用中規格比較
| 參數 | IPB70N10S3L12ATMA2 | IPB70N10S3L12ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel MOSFET, Metal Oxide | — |
| Drain-to-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C | 70 A | — |
| R<sub>DS(on)</sub> (Max) @ V<sub>GS</sub>=10V | 11.8 mΩ | — |
| Power Dissipation (P<sub>D</sub>) at T<sub>C</sub>=25°C | 125 W | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: V<sub>GS(th)</sub> typical/min/max] | — |
| 工作溫度範圍 | -55°C to +175°C | — |
| 封裝 | PG-TO263-3-2 (D2PAK) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 Qualified |
| Peak Reflow Temperature | 260°C (JEDEC J-STD-020) | — |
| Avalanche Tested | 100% tested | 100 % Avalanche Tested |
| RoHS / Green Compliance | Compliant (Green product) | — |
| Technology | OptiMOS-T trench | — |
| Polarity | N-Channel Enhancement Mode | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS (IPB70N10) |
| 電晶體類型 | — | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25°C | — | 70 A |
| Peak Drain Current (IDM) | — | 180 A |
| On-Resistance RDS(on) max at VGS=10V | — | 11.8 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 125 W |
| 工作接面溫度 | — | -55 °C to +175 °C |
| 封裝 / 外殼 | — | PG-TO263-3-2 (D2PAK, 2 Leads + Tab) |
| MSL (Moisture Sensitivity Level) | — | MSL1 (up to 260 °C peak reflow) |
| RoHS / Green | — | RoHS Compliant, Green Product |
| 無鹵素 | — | Yes |