IPD30N06S2L13ATMA4 vs IPD90P04P4L04ATMA2 比較
詳細並排比較 IPD30N06S2L13ATMA4 由 Infineon 與 IPD90P04P4L04ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD30N06S2L13ATMA4 | IPD90P04P4L04ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS | — |
| Channel Type | N-Channel | P-Channel |
| Mode | Enhancement | — |
| Drain-Source Voltage (Vds) | 55 V | -40 V |
| Continuous Drain Current (Id) | 30 A (Tc) | — |
| Power Dissipation (Pd) | 136 W (Tc) | — |
| 封裝 | PG-TO252-3-11 (DPAK) | PG-TO252-3-313 (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55 °C to +175 °C (Tj) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) | — |
| Lead-Free / RoHS | Yes (Green Package) | — |
| Avalanche Tested | 100 % production-tested | — |
| Technology | Planar (OptiMOS) | — |
| On-State Resistance (Rds(on)) | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] | — |
| Gate-Source Threshold (Vgs(th)) | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ at Vds=25V] | — |
| Diode Reverse Recovery (trr) | [DATA_NEEDED: trr typ] | — |
| 腳位數 | 3 (Drain tab + Gate + Source) | — |
| Tape and Reel Packaging | Yes (T&R per IEC 60286-3) | — |
| Part Number | — | IPD90P04P4L04ATMA2 |
| Family | — | OptiMOS-P2 |
| Continuous Drain Current (Id) at Tc=25C | — | -90 A |
| Power Dissipation (Pd) at Tc=25C | — | 125 W |
| On-State Resistance Rds(on) typ at Vgs=-10V | — | 4.3 mOhm |
| Gate Threshold Voltage Vgs(th) typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| Maximum Junction Temperature | — | 175 C |
| 工作溫度範圍 | — | -55 C to +175 C |
| 腳位數 | — | 3 (2 + Tab) |
| RoHS 狀態 | — | Compliant |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |