IPD65R380E6ATMA1 vs IPD60R360P7ATMA1 比較
詳細並排比較 IPD65R380E6ATMA1 由 Infineon 與 IPD60R360P7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD65R380E6ATMA1 | IPD60R360P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ E6 | CoolMOS P7 |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | Superjunction (CoolMOS™) | Superjunction (SJ) N-channel MOSFET |
| Drain-Source Voltage (V_DS) | 650 V | 600 V |
| Continuous Drain Current (I_D) at T_C | 10.6 A | — |
| R_DS(on) max at V_GS=10V | 380 mΩ | — |
| R_DS(on) test conditions | 3.2 A, 10 V | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V typ | — |
| Gate Charge (Q_G) | 39 nC at 10 V | — |
| Input Capacitance (C_iss) | 710 pF at 100 V | — |
| Power Dissipation (P_D) at T_C | 83 W | — |
| 工作溫度範圍 | -55 °C to +150 °C | — |
| 封裝 | PG-TO252-3 (DPAK), surface mount | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | — |
| MSL 等級 | 1 | 1 (per JEDEC J-STD20) |
| Gate-Source Voltage (V_GS) | — | ±20 V (max) |
| Continuous Drain Current (I_D) at T_C=25°C | — | 9 A |
| Pulsed Drain Current (I_D,pulse) | — | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) max @ V_GS=10V | — | 360 mΩ |
| Total Power Dissipation (P_tot) at T_C=25°C | — | 41 W |
| 工作接面溫度 | — | -55°C to +150°C |
| Storage Temperature | — | -55°C to +150°C |
| 封裝 / 外殼 | — | PG-TO252-3 (DPAK), surface mount |
| Gate Threshold Voltage (V_GS(th)) typ | — | 3.5 V (typ) |
| ESD Protection (HBM) | — | >2 kV (per datasheet) |
| RoHS Compliance | — | Compliant |
| Qualification | — | Industrial grade per JEDEC (J-STD20, JESD22) |