IPG20N04S4L07ATMA1 vs BSC018N04LSGATMA1 比較
詳細並排比較 IPG20N04S4L07ATMA1 由 Infineon 與 BSC018N04LSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPG20N04S4L07ATMA1 | BSC018N04LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ T2 | OptiMOS 3 |
| FET Type | 2x N-Channel (Dual, Independent) | N-Channel |
| Drain-to-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) | 20 A | — |
| RDS(on) Max @ VGS=10V | 7.2 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Power Dissipation (PD) Max | 65 W | — |
| 工作接面溫度 | -55°C to +175°C | — |
| 封裝 | PG-TDSON-8-4 (TDSON-8-4) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Logic-Level Gate Drive | Yes (4.5V VGS fully enhanced) | — |
| MSL 等級 | MSL1 (per JEDEC J-STD-020, 260°C peak reflow) | — |
| AEC-Q101 Qualification | Qualified | — |
| Avalanche Tested | 100% (per datasheet) | 100% (per datasheet) |
| RoHS / Lead-Free | RoHS compliant, lead-free terminations | — |
| Technology | — | MOSFET (Metal Oxide) |
| Continuous Drain Current (ID) @ TC=25°C | — | 100 A |
| Continuous Drain Current (ID) @ TA=25°C | — | 30 A |
| Power Dissipation (PD) @ TC=25°C | — | 125 W |
| Power Dissipation (PD) @ TA=25°C | — | 2.5 W |
| RDS(on) Max @ VGS=10 V | — | 1.8 mΩ |
| Drive Voltage (Max RDS(on), Min RDS(on)) | — | 4.5 V, 10 V |
| Gate Threshold Voltage (VGS(th)) Typ | — | [DATA_NEEDED: VGS(th) typical] |
| 工作溫度範圍 | — | -55°C to +150°C (TJ) |
| RoHS 狀態 | — | Compliant (Pb-free plating) |
| JEDEC Qualification | — | Yes (qualified per JEDEC for target applications) |