IPG20N04S4L08ATMA1 vs IAUCN04S7N012ATMA1 比較
詳細並排比較 IPG20N04S4L08ATMA1 由 Infineon 與 IAUCN04S7N012ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPG20N04S4L08ATMA1 - Dual N-Ch 40V 20A 8.2mΩ OptiMOS-T2 | Infineon
IPG20N04S4L08ATMA1 ✓ 啟用中
規格比較
| 參數 | IPG20N04S4L08ATMA1 | IAUCN04S7N012ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPG20N04S4L08ATMA1 | — |
| FET Type | 2 N-Channel (Dual) | — |
| FET Feature | Logic Level Gate | — |
| Drain-to-Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) @ 25°C | 20 A | — |
| On-Resistance Rds(on) max @ Vgs=10V, Id=17A | 8.2 mΩ | — |
| Power Dissipation (Pd) | 54 W | — |
| 工作溫度 | -55°C to +175°C | — |
| 封裝 / 外殼 | PG-TDSON-8-4 (TDSON-8) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Series | OptiMOS™-T2, Automotive, AEC-Q101 | — |
| MSL 等級 | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) | 1 |
| Avalanche Tested | 100% Avalanche Tested | — |
| RoHS / Green | RoHS Compliant, Green Product | — |
| Part Status | Active | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Technology | — | OptiMOS-7 (trench) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| On-State Resistance RDS(on) max at VGS=10V | — | 1.2 mΩ |
| On-State Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| 工作溫度範圍 | — | -55 °C to +175 °C [DATA_NEEDED: junction temperature max from datasheet] |
| 封裝 | — | PG-TDSON-8-34 (8-PowerTDFN) |
| Transistor Grade | — | Automotive (AEC-Q101) |
| 功率耗散 (Ptot) | — | [DATA_NEEDED: Ptot at TC=25°C] |
| Thermal Resistance RθJA | — | [DATA_NEEDED: RθJA on JEDEC PCB] |
| RoHS 狀態 | — | Compliant |
| 無鹵素 | — | Yes |
| Polarity | — | N-Channel |