IPN80R4K5P7ATMA1 vs IPN60R2K0PFD7SATMA1 比較

詳細並排比較 IPN80R4K5P7ATMA1 由 Infineon 與 IPN60R2K0PFD7SATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 ✓ 啟用中

規格比較

參數 IPN80R4K5P7ATMA1 IPN60R2K0PFD7SATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 800 V —
Continuous Drain Current (ID, Tc) 1.5 A —
Power Dissipation (Pd, Tc) 6 W —
On-Resistance (RDS(on), VGS=10V) 4.5 ohm max —
封裝 PG-SOT223 (surface mount, 3-pin + tab) PG-SOT223-3-1 (SOT-223)
安裝類型 Surface Mount Surface Mount
Technology CoolMOS Superjunction (SJ) CoolMOS superjunction
Operating Mode Enhancement-mode —
Grade Industrial —
Application Low-power SMPS, flyback converters, LED drivers —
RoHS 狀態 Compliant Compliant (per Newark listing)
Reel / Tape Packaging Tape & Reel (T/R) —
Product Series — CoolMOS PFD7
Channel Type — N-Channel
Drain-Source Voltage (V(BR)DSS) — 600 V
Continuous Drain Current (Tc) — 3 A
Power Dissipation (Tc) — 6 W
RDS(on) typical @ VGS=10V — 2.0 Ohm
RDS(on) max @ VGS=10V — 1.626 Ohm (per Infineon product page)
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 3.8 nC @ 10 V (per UTMel listing)
Input Capacitance (Ciss) — 134 pF @ 400 V (per UTMel listing)
工作溫度範圍 — [DATA_NEEDED: operating temperature range]
MSL 等級 — [DATA_NEEDED: MSL level]

資料表與資源

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