IPP100N12S305AKSA1 vs IHW40N120R5XKSA1 比較

詳細並排比較 IPP100N12S305AKSA1 由 Infineon 與 IHW40N120R5XKSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPP100N12S305AKSA1 IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon

IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon

IPP100N12S305AKSA1 ✓ 啟用中
Infineon
IHW40N120R5XKSA1 IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 ✓ 啟用中

規格比較

參數 IPP100N12S305AKSA1 IHW40N120R5XKSA1
品牌 Infineon Infineon
類別 MOSFETs IGBTs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel MOSFET —
Technology OptiMOS trench Trench Field Stop, Reverse-Conducting RC-H5
Drain-Source Voltage (VDS) 120 V —
Continuous Drain Current (ID) at Tc 100 A —
脈衝汲極電流 [DATA_NEEDED: pulsed ID value] —
Maximum Power Dissipation (Ptot) at Tc 300 W —
Gate-Source Voltage (VGS) max ±20 V —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Avalanche Energy, Single Pulse [DATA_NEEDED: EAS] —
工作接面溫度 -55 °C to +175 °C -40C to +175C
封裝 TO-220 (PG-TO220-3-1) TO-247-3 (PG-TO247-3) through-hole
安裝類型 Through Hole Through Hole
腳位數 3 —
MSL Moisture Sensitivity Level 1 (260 °C peak reflow) —
Automotive Qualification AEC-Q101 qualified —
Avalanche Tested 100% tested —
RoHS Compliance Compliant (Green product) Compliant
Collector-Emitter Voltage (VCE) — 1200 V
Continuous Collector Current (IC, TC=25C) — 80 A
Pulsed Collector Current (ICM) — 160 A
Maximum Power Dissipation (Ptot) — 394 W
Gate-Emitter Voltage (VGE) — +/-20 V
VCE(sat) at IC=40A, VGE=15V, Tj=25C — [DATA_NEEDED: typical VCE(sat) value]
Integrated Anti-Parallel Diode — Yes (monolithic reverse-conducting)
Storage Temperature — -55C to +150C
Soldering Temperature (max 10s) — 260 C
Switching Application — Resonant / soft switching (induction cooking optimized)
無鹵素 — Yes
MSL 等級 — N/A (through-hole)

資料表與資源

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