IQDH29NE2LM5CGSCATMA1 vs IQEH68NE2LM7UCGATMA1 比較
詳細並排比較 IQDH29NE2LM5CGSCATMA1 由 Infineon 與 IQEH68NE2LM7UCGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IQDH29NE2LM5CGSCATMA1 | IQEH68NE2LM7UCGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 Power-Transistor | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (Ta) | 75 A | — |
| Continuous Drain Current (Tc) | 789 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 278 W | — |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | — |
| 封裝 | PG-WHTFN-9-U02 (WHTFN EP) | PG-TTFN-9-3 (surface mount) |
| 腳位數 | 9 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL Level] |
| RoHS 狀態 | Compliant | Compliant (per distributor listing) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta | — | 47 A |
| Pulsed Drain Current (IDM) @ Tc | — | 338 A |
| Power Dissipation (PD) @ Ta | — | 2.5 W |
| Power Dissipation (PD) @ Tc | — | 130 W |
| Gate Threshold Voltage Type | — | Logic-level (per OptiMOS 7 family) |
| On-Resistance Family | — | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) |
| Maximum Junction Temperature | — | 175 °C |
| 工作溫度範圍 | — | -55 °C to +175 °C (typical for OptiMOS 7) |
| Packaging | — | Tape & Reel (per ATMA1 suffix) |