IR2110SPBF vs IRS21814MTRPBF 比較

詳細並排比較 IR2110SPBF 由 Infineon 與 IRS21814MTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IR2110SPBF IRS21814MTRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Half-bridge gate driver —
拓撲 High-side and low-side referenced output channels —
Number of Channels 2 (1 high-side, 1 low-side) —
Logic Type Non-inverting —
Maximum Offset Voltage (Voffset) 500 V —
Gate Drive Supply Voltage (Vcc/VCC) 10 V to 20 V —
Peak Output Current (source/sink) 2.0 A / 2.0 A —
Typical Propagation Delay (ton/toff) 94 ns / 94 ns —
Rise/Fall Time (typical) 25 ns / 17 ns —
Logic Input Compatibility 3.3 V CMOS / LSTTL 3.3 V and 5 V CMOS/LSTTL
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes, both Vcc and VCC —
工作溫度範圍 -40 C to +125 C —
封裝 16-pin SOIC (SO-16, DW suffix) 16-MLPQ (4x4 mm) with Exposed Pad
安裝類型 Surface Mount Surface Mount
Technology HVIC + latch-immune CMOS —
Lead-Free / RoHS Yes / Compliant (Pb-free PBF suffix) —
Configuration — High and Low Side, Independent
Driver Channels — 2 (half-bridge)
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Supply Voltage (VBS) — 10 V to 20 V (bootstrap)
Offset Voltage (High-Side) — Up to +600 V
Peak Source Current (typ.) — 1.9 A
Peak Sink Current (typ.) — 2.3 A
Propagation Delay (typ.) — 180 ns
Delay Matching (HS to LS) — [DATA_NEEDED: HS-LS delay matching spec]
Undervoltage Lockout — Yes (VCC and VBS)
dV/dt Immunity — Yes (negative-transient tolerant)
工作溫度 — -40C to +125C
Packaging — Tape & Reel
RoHS 狀態 — Compliant

資料表與資源

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