IR2132SPBF vs IR2132STRPBF 比較

詳細並排比較 IR2132SPBF 由 Infineon 與 IR2132STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IR2132STRPBF IR2132STRPBF - 600V 3-Phase Gate Driver IC | Infineon

IR2132STRPBF - 600V 3-Phase Gate Driver IC | Infineon

IR2132STRPBF ✓ 啟用中

規格比較

參數 IR2132SPBF IR2132STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Part Number IR2132SPBF —
Manufacturer Infineon Technologies (formerly International Rectifier) —
功能 Half-Bridge Gate Driver IC (3-phase, 6-channel) —
Configuration Inverting input 3-Phase Bridge
輸出數量 6 (3 high-side, 3 low-side) —
Maximum Offset Voltage (High-Side) 600 V —
Output Current (Source/Sink) 0.5 A —
Gate Drive Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Logic Input Compatibility CMOS/LSTTL, down to 2.5 V logic —
Typical Deadtime 0.8 us —
Undervoltage Lockout (UVLO) Yes, all 6 channels Yes, on all channels
Bootstrap Design Required for high-side channels —
dV/dt Immunity Yes Yes (negative transient tolerant)
Negative VS Transient Tolerance Yes —
封裝 28-SOIC (Wide Body, 7.50 mm) 28-SOICWB (0.295 inch / 7.50 mm width)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -40C to +125C [DATA_NEEDED: operating temperature range]
Lead-Free / RoHS Yes (PbF suffix, RoHS compliant) —
Packaging Tube —
拓撲 3-phase bridge driver for MOSFETs/IGBTs —
Driver Type — Half-Bridge Gate Driver, Inverting Input
Number of Drivers — 6 (3 high-side + 3 low-side)
Offset Voltage (Max) — 600 V
Source Current (Typ.) — 250 mA
Sink Current (Typ.) — 500 mA
Propagation Delay (Typ.) — 675 ns
Internal Dead-Time (Typ.) — 0.8 µs
Input Logic — Inverting (HIN/LIN active-low)
Bootstrap Architecture — Yes (floating high-side channel)
Over-Current Protection — Yes, with ITRIP input and FAULT output
Integrated Op-Amp — Yes (current-sense amplifier)
Fault Output — Yes, active-low latched FAULT pin
RoHS 狀態 — Compliant (PBF suffix)

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