IR2304SPBF vs IR2101PBF 比較

詳細並排比較 IR2304SPBF 由 Infineon 與 IR2101PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IR2304SPBF IR2101PBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Half-Bridge Gate Driver IC —
Configuration High and Low Side, Independent Channels Half-Bridge (High and Low Side)
輸出數量 2 2
Maximum Offset (Bootstrap) Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Output Source/Sink Current 60 mA / 130 mA —
Propagation Delay (Typical) 220 ns —
Input Logic Compatibility 3.3 V, 5 V, 15 V —
Undervoltage Lockout (UVLO) Both High-Side and Low-Side Channels —
Negative Transient Voltage Tolerance Yes (dV/dt immune) —
Logic Input Polarity Non-Inverting —
封裝 8-Pin SOIC (SO-8 N) 8-PDIP (0.300 inch, 7.62 mm)
安裝類型 Surface Mount Through-Hole
工作溫度範圍 -40 C to +125 C —
Technology HVIC + Latch-Immune CMOS, Monolithic —
RoHS 狀態 Compliant (Pb-free) Compliant (Pb-free PBF suffix)
Input Type — Non-Inverting
Number of Drivers — 2 (High-Side + Low-Side)
Supply Voltage (VCC/VBS) — 10 V to 20 V
Logic Input Compatibility — 3.3 V, 5 V, 15 V CMOS/LSTTL
Peak Source Current — 0.21 A (210 mA)
Peak Sink Current — 0.36 A
Offset (High-Side) Voltage — Up to +600 V
Propagation Delay — 160 ns
Undervoltage Lockout — Yes
dV/dt Immunity — Yes (negative transient tolerant)
工作溫度 — -40C to +125C
Packaging — Tube

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