IR2304SPBF vs IR2109STRPBF 比較

詳細並排比較 IR2304SPBF 由 Infineon 與 IR2109STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IR2109STRPBF IR2109STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IR2109STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IR2109STRPBF ✓ 啟用中

規格比較

參數 IR2304SPBF IR2109STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Half-Bridge Gate Driver IC Half-Bridge Gate Driver IC
Configuration High and Low Side, Independent Channels Half-Bridge (High-Side + Low-Side)
輸出數量 2 2 (High-Side / Low-Side)
Maximum Offset (Bootstrap) Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Output Source/Sink Current 60 mA / 130 mA —
Propagation Delay (Typical) 220 ns —
Input Logic Compatibility 3.3 V, 5 V, 15 V —
Undervoltage Lockout (UVLO) Both High-Side and Low-Side Channels —
Negative Transient Voltage Tolerance Yes (dV/dt immune) —
Logic Input Polarity Non-Inverting —
封裝 8-Pin SOIC (SO-8 N) 8-SOIC (3.90 mm Width)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -40 C to +125 C —
Technology HVIC + Latch-Immune CMOS, Monolithic —
RoHS 狀態 Compliant (Pb-free) Compliant
High-Side Offset Voltage (Max) — 600 V
Supply Voltage (VCC) — 10 V to 20 V
Peak Source Output Current — 0.2 A (typ)
Peak Sink Output Current — 0.35 A (typ)
Propagation Delay (typ) — 750 ns
Rise/Fall Time (typ) — [DATA_NEEDED: rise/fall time]
ton / toff (typ) — 540 ns
Input Logic — Non-Inverting
UVLO — Yes (VCC and VBS)
Bootstrap Diode — Integrated
Dead Time Control — Built-in
dV/dt Immunity — Yes
Negative VS Transient Tolerance — Yes
工作溫度 — -40 C to +125 C

資料表與資源

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