IRF540NSTRLPBF - 100V 33A N-Channel MOSFET D2PAK | Infineon
MPN： IRF540NSTRLPBF ✓ 啟用中IRF540NSTRLPBF 概覽
An N-channel power MOSFET is a voltage-controlled majority-carrier device whose drain current is modulated by the gate-to-source voltage. Within the broader taxonomy, N-channel MOSFETs sit below power MOSFETs, which in turn belong to the discrete semiconductor family of transistors. They are typically preferred over P-channel devices in low-side switching or synchronous-rectifier positions because their lower Rds(on) per unit silicon area reduces conduction loss.
Key features of the IRF540NSTRLPBF include a continuous drain current of 33 A at Tc = 25 C, a pulsed drain current rating suitable for inductive loads, and a power dissipation of 130 W at Tc = 25 C. The D2PAK surface-mount footprint allows direct attachment to a PCB copper pour that serves as both electrical ground and thermal heatsink, simplifying mechanical assembly compared to the through-hole TO-220 variant of the same die.
The device uses Infineon's HEXFET stripe-cell planar structure with a vertical DMOS architecture, optimized for low on-resistance per die area. The avalanche-rated body diode and high dv/dt immunity make the part robust against the voltage transients seen in motor and solenoid switching. Thermal resistance junction-to-case is on the order of 1.0 C/W, enabling the 130 W dissipation figure when the case is properly soldered to a sufficient copper area.
Typical applications include DC motor drives in industrial automation, solenoid and relay drivers, low-frequency switching regulators, LED drivers, battery protection circuits, and uninterruptible power supplies. The 100 V Vds rating gives comfortable margin on 24 V and 48 V buses.
When designing with this part, ensure that the PCB copper area under the D2PAK tab is sized to keep the junction below 150 C at worst-case load. A 10 V gate drive is required for full enhancement; logic-level (5 V) microcontrollers must use a gate-driver stage.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical thermal and gate-drive design notes not found in the manufacturer datasheet.
直接替換替代品，適用於 IRF540NSTRLPBF — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IRF540NSTRLPBF （相同外形與佔位） — 差異在於 Package, Technology, RoHS Status, Mounting Type, Operating Temperature Range.
IRF540NSTRRPBF
✅ 直接替換📋 參考替代品（不在目錄中）
IRF540NSPBF
✅ 直接替換📋 參考替代品（不在目錄中）
IRF2907ZSTRLPBF
✅ 直接替換聯絡詢價
查看資料表 →STP55NF06L
✅ 直接替換📋 參考替代品（不在目錄中）
IRFZ44NSTRLPBF
✅ 直接替換聯絡詢價
查看資料表 →IRF540NSTRLPBF 最大額定值與電氣特性
| 電晶體類型 | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) |
| Drain-Source Voltage (Vdss) | 100 V |
| Continuous Drain Current (Id) at Tc=25C | 33 A |
| Pulsed Drain Current (Idm) | 110 A (per datasheet pulse curve) |
| On-Resistance Rds(on) max at Vgs=10V | 44 mOhm |
| Gate Threshold Voltage Vgs(th) | 2.0 V to 4.0 V |
| Total Gate Charge Qg | 47.3 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | 130 W |
| 工作溫度範圍 | -55 C to +175 C |
| 封裝 | D2PAK (TO-263), surface mount |
| 安裝類型 | Surface Mount |
| Packaging | Tape & Reel (13-inch reel) |
| RoHS 狀態 | Compliant (Pb-free) |
| Avalanche Energy Rated | Yes (HEXFET ruggedized) |
IRF540NSTRLPBF 腳位配置
| 腳位 1 | Gate — Gate drive input; threshold 2.0-4.0 V, full enhancement at 10 V |
| 腳位 2 | Drain — Drain terminal; internally connected to metal tab |
| 腳位 3 | Source — Source terminal; main current return path |
| 腳位 Tab | Drain (Tab) — Metal tab electrically and thermally connected to drain; primary thermal path |
安全工作區 (DC, Tj=25C)
典型應用
IRF540NSTRLPBF 適用於 6 應用s: 24V Brushed DC Motor Drive, Solenoid and Relay Driver, Low-Frequency Switching Regulator (Buck/Boost), LED Driver for High-Power Lighting, Battery Protection and Power Path Switch, Uninterruptible Power Supply (UPS) and Inverter.
24V Brushed DC Motor Drive
The IRF540NSTRLPBF is well-suited to 24 V brushed DC motor drive stages in industrial automation and robotics. Its 100 V Vds rating gives comfortable margin above the 24 V nominal bus and the back-EMF spikes of small to medium motors, while the 33 A continuous drain current handles stall currents of fractional-horsepower motors without tripping SOA limits. The 44 mOhm on-resistance keeps conduction loss under 5 W at 10 A motor current, and the HEXFET avalanche-rated body diode absorbs the inductive kick when the motor is suddenly disconnected. Mount the D2PAK tab on at least one square inch of copper pour to keep junction temperature below 125 C at full load.
推薦
Solenoid and Relay Driver
In solenoid and relay driver circuits, the IRF540NSTRLPBF serves as a low-side switch that energizes inductive loads from a 24 V or 48 V bus. The 47.3 nC total gate charge lets a small logic-level gate driver pull the gate in well under 100 ns, minimizing switching loss. Its ruggedized avalanche rating handles the flyback energy of typical 12 V/24 V solenoids without needing a separate clamp diode in many cases. The D2PAK surface-mount footprint simplifies assembly on a control PCB where space is at a premium and a chassis-mount heatsink is unnecessary.
推薦
Low-Frequency Switching Regulator (Buck/Boost)
The IRF540NSTRLPBF can serve as the main switch or synchronous rectifier in non-isolated buck or boost converters operating from a 24 V or 48 V input down to 12 V or 5 V outputs at currents up to roughly 20 A. While not as fast as newer 100 V MOSFETs with sub-10 nC gate charge, its low 44 mOhm Rds(on) keeps conduction loss low in slow-switching (<100 kHz) applications where the part still meets efficiency targets. Designers should observe the SOA curve carefully at high duty cycle and high line to ensure junction temperature stays below 150 C, and provide adequate gate drive above 10 V for full enhancement.
推薦
LED Driver for High-Power Lighting
For high-power LED drivers driving strings of 1-3 A LEDs from a 24 V or 36 V supply, the IRF540NSTRLPBF can be used as a constant-current linear regulator or low-frequency PWM switch. Its 100 V rating and 33 A current capability handle multi-string LED arrays with comfortable headroom, while the low on-resistance minimizes power dissipation when used in linear constant-current mode. A small copper-pour heatsink is generally sufficient for LED driver applications where average current is moderate.
推薦
Battery Protection and Power Path Switch
In multi-cell Li-ion or lead-acid battery packs with nominal voltages up to 36 V (12 V, 24 V, 36 V systems), the IRF540NSTRLPBF can act as a low-side disconnect or power-path switch. Its 100 V Vds rating exceeds the highest expected pack voltage including transients, and the 44 mOhm Rds(on) contributes less than 100 mV of drop at 2 A continuous discharge current. The ruggedized body diode and avalanche rating protect against inductive kick from connected motors or solenoids, making the part attractive for cordless-tool battery management where a simple fuse replacement is desired.
推薦
Uninterruptible Power Supply (UPS) and Inverter
In low-frequency line-interactive UPS systems or square-wave inverters running from a 24 V or 48 V battery to drive 120 V/230 V AC loads, the IRF540NSTRLPBF serves as the primary low-side switch on each phase leg. At 50/60 Hz line frequency, switching losses are negligible and the 44 mOhm Rds(on) keeps conduction loss manageable at currents up to 15-20 A continuous. Designers typically use four of these MOSFETs in an H-bridge with an IR2110 or IR2104 high/low-side gate driver. Adequate PCB copper area on the D2PAK tab is essential to maintain thermal margin at peak current.
推薦
推薦產品摘要
工程參考資料，適用於 IRF540NSTRLPBF — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IRF540NSTRRPBF | IRF540NSPBF | IRF2907ZSTRLPBF | STP55NF06L | IRFZ44NSTRLPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics | Infineon |
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Vdss (V) | 100 | 100 | 100 | 75 | 60 | 55 |
| Continuous Id at Tc=25C (A) | 33 | 33 | 33 | 75 | 55 | 49 |
| Rds(on) max at Vgs=10V (mOhm) | 44 | 44 | 44 | 4.5 | 18 | 17.5 |
| Total Gate Charge Qg (nC) | 47.3 | 47.3 | 47.3 | 180 | 60 | 63 |
| Power Dissipation Pd at Tc=25C (W) | 130 | 130 | 130 | 300 | 120 | 94 |
| Operating Temperature Range (C) | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 |
| RoHS / Pb-Free | Yes | Yes | Yes | Yes | Yes | Yes |
主要差異化特點
- Same die with opposite reel orientation enables seamless line balancing (對比IRF540NSTRRPBF)
- 30 percent lower on-resistance than the first-generation IRF540 (對比Original IRF540 (77 mOhm))
- Surface-mount D2PAK footprint versus through-hole TO-220 enables reflow assembly (對比IRF540NPBF (TO-220))
設計說明
Estimated: at Vds = 24 V, Id = 15 A, and continuous DC operation, conduction loss is I^2 * Rds(on) = 225 * 0.044 = 9.9 W. The D2PAK junction-to-case thermal resistance is approximately 1.0 C/W per Infineon's IRF540N datasheet, but junction-to-ambient on a standard 1 oz FR-4 board with 1 square inch of copper is around 40 C/W. Junction temperature rise = 9.9 W * 40 C/W = 396 C above ambient, which exceeds Tj_max = 175 C. Either increase the copper area to 2-3 square inches or derate the load current to keep Tj below 150 C. A 1 oz 2-square-inch copper pad typically yields RthJA ~ 30 C/W, which would give a 297 C rise - still too high. Plan on a forced-air or a small extruded heatsink bolted to the D2PAK tab for any application dissipating more than 3-4 W continuously.
Layout for a D2PAK power MOSFET should provide a continuous top-layer copper pour that connects the drain tab to the load return or the high-current input rail. Use thermal vias under the tab to bring heat to inner copper planes; a 3x3 grid of 0.3 mm drill / 0.5 mm pad vias filled with solder or thermally conductive epoxy reduces RthJA by roughly 30 percent compared to a single-side pour. The gate trace should be kept short and routed away from the drain switching node to minimize dv/dt-induced gate ringing; a 10-100 ohm gate-source resistor close to the IC pins prevents parasitic turn-on in half-bridge layouts.
Three pitfalls are common with this part. First, driving the gate from a 3.3 V or 5 V microcontroller GPIO leaves the MOSFET in the linear region with Rds(on) several times higher than the 44 mOhm spec, causing severe self-heating - always use a 10 V gate driver. Second, forgetting that the D2PAK metal tab is the drain terminal: if the tab is not soldered (or is left floating in a hand-built prototype), the drain current path is broken and the part will not function. Third, ignoring SOA at high Vds and high duty cycle: the DC SOA curve shows only about 1.3 A is safe at 100 V Vds, so 24 V applications are fine but anything approaching 80 V continuous requires careful thermal derating.
For half-bridge or full-bridge motor drive layouts, keep the high-side and low-side FETs symmetric and minimize the loop area between the high-side drain, the low-side drain, and the bootstrap capacitor. Use a gate driver IC such as the IR2114STRPBF or IRS2011STRPBF placed within 1 cm of the gate pins. The DC-bus decoupling capacitor (typically a 10-100 uF electrolytic in parallel with a 100 nF ceramic) should sit directly between the high-side drain and the low-side source, with the ceramic cap the closest to the FETs.
合規資訊
Pb-free per the 'PBF' suffix and Infineon product page. Not AEC-Q100 qualified; choose an automotive-grade equivalent such as the IRF540NSTRLPBF-AUMA1 if automotive qualification is required.
