IRF7416TRPBF vs IRLR9343TRPBF 比較

詳細並排比較 IRF7416TRPBF 由 Infineon 與 IRLR9343TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRF7416TRPBF IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon

IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon

IRF7416TRPBF ✓ 啟用中
Infineon
IRLR9343TRPBF IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRLR9343TRPBF ✓ 啟用中

規格比較

參數 IRF7416TRPBF IRLR9343TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type P-Channel P-Channel MOSFET
Technology HEXFET (IR MOSFET) IR HEXFET
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) at TA=25C -10 A —
Pulsed Drain Current (IDM) -50 A [DATA_NEEDED: pulsed drain current rating]
Static Drain-to-Source On-Resistance (RDS(on)) max 20 mOhm at VGS = -10 V —
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) -1 V to -3 V [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) 61 nC 31 nC (typical)
Power Dissipation (PD) max at TA=25C 2.5 W —
Thermal Resistance, Junction-to-Ambient (RthJA) 50 C/W —
工作接面溫度範圍 -55 C to +150 C —
封裝 8-SO (SOIC-8) PG-TO252-3 (DPAK) Surface Mount
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
Lead-Free Yes Yes
MSL 等級 1 (unlimited) 1
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLR9343TRPBF
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at Tc=25C — -20 A
On-Resistance RDS(on) max at VGS=-10V — 105 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: max VGS rating]
Power Dissipation (PD) at Tc=25C — 79 W
工作溫度範圍 — [DATA_NEEDED: Tj min/max operating range]
Optimized Application — Class-D audio amplifier output stages
Polarity — P-Channel

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