IRFH7084TRPBF vs IRF7469TRPBF 比較
詳細並排比較 IRFH7084TRPBF 由 Infineon 與 IRF7469TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFH7084TRPBF | IRF7469TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel |
| Technology | StrongIRFET™ (trench MOSFET) | IR MOSFET™ (HEXFET) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25°C, package-limited) | 100 A | — |
| Silicon-Limited Drain Current | 265 A | — |
| Power Dissipation (PD, Tc=25°C) | 156 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.25 mΩ | — |
| On-Resistance RDS(on) typ @ VGS=10V | 0.95 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage VGS(th) typ | 1.7 V to 2.7 V | — |
| Input Capacitance (Ciss) max @ 25V | 6560 pF | — |
| 工作溫度範圍 | -55°C to +175°C (TJ) | -55°C to +150°C (Tj) |
| 封裝 | 8-PQFN 5x6 mm (SuperSO8) | 8-SO (SOIC-8) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 | 1 (unlimited) |
| RoHS 狀態 | Compliant | Compliant |
| 無鹵素 | Compliant | — |
| RthJC max | 0.96 °C/W (per datasheet) | — |
| Drain-Source Voltage (Vdss) | — | 40 V |
| Continuous Drain Current (Id) at TA=25°C | — | 9 A |
| Rds(on) Max at Vgs=10V | — | 17 mΩ |
| Total Gate Charge (Qg) | — | 15 nC |
| Gate-Source Voltage (Vgs) Max | — | ±20 V |
| Power Dissipation (Pd) at TA=25°C | — | 2.5 W |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |
| Channel Mode | — | Enhancement |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |