IRFH7084TRPBF vs IRFH8318TRPBF 比較

詳細並排比較 IRFH7084TRPBF 由 Infineon 與 IRFH8318TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFH7084TRPBF IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon

IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon

IRFH7084TRPBF ✓ 啟用中
Infineon
IRFH8318TRPBF IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΩ | Infineon

IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΩ | Infineon

IRFH8318TRPBF ✓ 啟用中

規格比較

參數 IRFH7084TRPBF IRFH8318TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology StrongIRFET™ (trench MOSFET) StrongIRFET™ (N-Channel Trench MOSFET)
Drain-Source Voltage (VDS) 40 V 30 V
Continuous Drain Current (ID, Tc=25°C, package-limited) 100 A —
Silicon-Limited Drain Current 265 A —
Power Dissipation (PD, Tc=25°C) 156 W —
On-Resistance RDS(on) max @ VGS=10V 1.25 mΩ —
On-Resistance RDS(on) typ @ VGS=10V 0.95 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage VGS(th) typ 1.7 V to 2.7 V —
Input Capacitance (Ciss) max @ 25V 6560 pF —
工作溫度範圍 -55°C to +175°C (TJ) —
封裝 8-PQFN 5x6 mm (SuperSO8) PQFN 5x6 (SuperSO8, 8-PowerTDFN)
安裝類型 Surface Mount Surface Mount
MSL 等級 1 1
RoHS 狀態 Compliant Compliant
無鹵素 Compliant —
RthJC max 0.96 °C/W (per datasheet) —
Manufacturer — Infineon Technologies
Part Number — IRFH8318TRPBF
Continuous Drain Current (ID) at Ta=25°C — 27 A
Continuous Drain Current (ID) at Tc=25°C — 120 A
On-Resistance RDS(on) max at VGS=10V — 3.1 mΩ
Total Gate Charge (Qg) — 41 nC
Power Dissipation (Ta) — 3.6 W
Power Dissipation (Tc) — 59 W
工作溫度 — -55°C to +150°C
Lead-Free — Yes
Description — Synchronous MOSFET for high-frequency buck converters

資料表與資源

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