IRFH7084TRPBF vs IRFR4615TRLPBF 比較

詳細並排比較 IRFH7084TRPBF 由 Infineon 與 IRFR4615TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFH7084TRPBF IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon

IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon

IRFH7084TRPBF ✓ 啟用中
Infineon
IRFR4615TRLPBF IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF ✓ 啟用中

規格比較

參數 IRFH7084TRPBF IRFR4615TRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology StrongIRFET™ (trench MOSFET) IR MOSFET (N-Channel Enhancement Mode)
Drain-Source Voltage (VDS) 40 V 150 V
Continuous Drain Current (ID, Tc=25°C, package-limited) 100 A —
Silicon-Limited Drain Current 265 A —
Power Dissipation (PD, Tc=25°C) 156 W —
On-Resistance RDS(on) max @ VGS=10V 1.25 mΩ —
On-Resistance RDS(on) typ @ VGS=10V 0.95 mΩ —
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: VGS max]
Gate Threshold Voltage VGS(th) typ 1.7 V to 2.7 V —
Input Capacitance (Ciss) max @ 25V 6560 pF —
工作溫度範圍 -55°C to +175°C (TJ) -55C to +175C
封裝 8-PQFN 5x6 mm (SuperSO8) TO-252AA (DPAK)
安裝類型 Surface Mount Surface Mount
MSL 等級 1 —
RoHS 狀態 Compliant —
無鹵素 Compliant —
RthJC max 0.96 °C/W (per datasheet) —
Continuous Drain Current (ID) at TC=25C — 33 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 42 mOhm
Total Gate Charge (Qg) — 26 nC
Gate-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Power Dissipation (PD) at TC=25C — 144 W
Avalanche Energy (EAS) — 109 mJ
Lead-Free / RoHS — Yes (PBF suffix indicates Pb-free)
單脈衝突崩能量 — 109 mJ

資料表與資源

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