IRFR120NTRLPBF vs IRFR5305TRLPBF 比較

詳細並排比較 IRFR120NTRLPBF 由 Infineon 與 IRFR5305TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRFR120NTRLPBF IRFR5305TRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology IR MOSFET (HEXFET) HEXFET fifth-generation planar MOSFET
Drain-Source Voltage (VDS) 100 V -55 V
Continuous Drain Current (ID) at TC=25C 9.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) range]
On-Resistance RDS(on) max at VGS=10V 210 mΩ —
Total Gate Charge (Qg) 16.7 nC —
Power Dissipation (PD) at TC=25C 48 W —
工作接面溫度範圍 -55C to +175C —
Avalanche Energy Rated Yes (fully avalanche rated) —
封裝 PG-TO252-3 (DPAK) TO-252AA (DPAK), surface mount
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant —
Lead-Free Finish Yes (Pb-free) —
Polarity / Channel Type — P-Channel
Continuous Drain Current (ID) at Tc=25C — -31 A
RDS(on) max at VGS=-10V — 65 mΩ
RDS(on) max at VGS=-5V — [DATA_NEEDED: RDS(on) at VGS=-5V]
Power Dissipation (PD) at Tc=25C — 110 W
工作接面溫度 — -55C to +175C
Avalanche Rated — Yes (fully avalanche rated)
Lead-Free / RoHS — Yes (Pb-free, suffix "PBF")
Tape & Reel Orientation — Left orientation (TRLPBF = Tape & Reel, Left)

資料表與資源

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