IRFS4321TRLPBF vs IRFS4321TRRPBF 比較

詳細並排比較 IRFS4321TRLPBF 由 Infineon 與 IRFS4321TRRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFS4321TRRPBF IRFS4321TRRPBF - 150V 83A N-Channel HEXFET MOSFET | Infineon

IRFS4321TRRPBF - 150V 83A N-Channel HEXFET MOSFET | Infineon

IRFS4321TRRPBF ✓ 啟用中

規格比較

參數 IRFS4321TRLPBF IRFS4321TRRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel MOSFET, Metal Oxide N-Channel MOSFET
Drain-to-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID) at Tc=25C 85 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
RDS(on) Max at VGS=10V 15 mOhm —
RDS(on) Max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-to-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) Typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) Typ 71 nC —
Total Gate Charge (Qg) Max 110 nC —
Power Dissipation (PD) at Tc=25C 350 W —
Thermal Resistance Junction-to-Case (RθJC) Max 0.45 C/W —
Thermal Resistance Junction-to-Case (RθJC) End-of-Life 0.65 C/W (after 1000 cycles -55C to +150C) —
工作接面溫度 -55C to +175C -55C to +175C
封裝 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB D2PAK (TO-263), 3-pin (2+Tab)
安裝類型 Surface Mount Surface Mount
Technology IR HEXFET (IR MOSFET) HEXFET (IR MOSFET)
RoHS 狀態 Compliant —
Continuous Drain Current (ID) at 25C — 85 A (Tc)
Continuous Drain Current (ID) at 100C — [DATA_NEEDED: ID at 100C]
RDS(on) Maximum at VGS=10V — 15 mOhm
Total Gate Charge (Qg) — 71 nC
Gate-to-Source Voltage Maximum — +/- 30 V
Power Dissipation (PD) — 350 W (Tc)
Thermal Resistance Junction-to-Case (RthJC) — 0.65 C/W (end of life, D2PAK)
Thermal Resistance Junction-to-Ambient (RthJA) — [DATA_NEEDED: RthJA]
Avalanche Energy Rating — Single-pulse avalanche rated (per datasheet)
Lead-Free / RoHS Status — Lead-Free (PBF suffix), RoHS Compliant
MSL 等級 — [DATA_NEEDED: MSL Level]

資料表與資源

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