IRLL024NTRPBF vs IRFR024NTRPBF 比較
詳細並排比較 IRLL024NTRPBF 由 Infineon 與 IRFR024NTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLL024NTRPBF | IRFR024NTRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | — |
| FET Type | MOSFET, Metal Oxide | — |
| Operating Mode | Enhancement Mode | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 55 V | — |
| Continuous Drain Current (ID) at Ta | 3.1 A | — |
| Pulsed Drain Current (IDM) | 4.4 A | 60 A |
| Static Drain-Source On-Resistance (RDS(on)) | 0.065 ohm | — |
| Total Gate Charge (Qg) | 10.4 nC | — |
| Gate Threshold Voltage (VGS(th)) | Logic Level (5 V drive capable) | — |
| Maximum Power Dissipation (Pd) at Ta | 1.0 W | — |
| Maximum Operating Junction Temperature | 175 C | — |
| 封裝 | SOT-223 (4-pin) | TO-252-3 (DPAK, SC-63), surface mount |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | — |
| RoHS 狀態 | Compliant | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Series | — | HEXFET Power MOSFET (5th generation) |
| 電晶體類型 | — | N-Channel MOSFET |
| Maximum Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) | — | 17 A (at TC = 25 C) |
| On-Resistance (RDS(on)) | — | 75 mOhm max (at VGS = 10 V) |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Typical Gate Charge (Qg) | — | 13.3 nC |
| Total Power Dissipation (PD) | — | 45 W (at TC = 25 C) |
| 工作接面溫度 | — | -55 C to +175 C |
| Packaging | — | Tape and Reel (TR) |
| RoHS Compliance | — | Compliant (Pb-free / PbF terminations) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |