IRLS3036TRLPBF vs IRFB3207ZPBF 比較
詳細並排比較 IRLS3036TRLPBF 由 Infineon 與 IRFB3207ZPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLS3036TRLPBF | IRFB3207ZPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | — |
| Technology | IR HEXFET (planar DMOS) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) at Tc=25C | 270 A | — |
| Continuous Drain Current (Id) at Tc=100C | 195 A | — |
| Pulsed Drain Current (Idm) | 1100 A | — |
| Rds(on) max @ Vgs=10V | 1.9 mOhm | — |
| Gate-Source Threshold Voltage (Vgs(th)) | Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max] | — |
| Total Gate Charge (Qg) typ | 91 nC | — |
| Gate-Source Voltage (Vgs) max | [DATA_NEEDED: Vgs max +/- V] | — |
| Power Dissipation (Pd) at Tc=25C | 380 W | — |
| 工作溫度範圍 | -55C to +175C | — |
| 封裝 | D2PAK (TO-263), surface mount | TO-220AB (3-lead through-hole) |
| 安裝類型 | Surface Mount | Through Hole |
| MSL 等級 | 1 | N/A (through-hole) |
| RoHS 狀態 | Compliant (PBF suffix) | — |
| Lead-Free | Yes (PBF suffix) | — |
| Integrated Body Diode | Yes (avalanche rated) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| 工作接面溫度 | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |