IRLTS2242TRPBF vs IRFR5410TRPBF 比較

詳細並排比較 IRLTS2242TRPBF 由 Infineon 與 IRFR5410TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRLTS2242TRPBF IRLTS2242TRPBF - 20V P-Ch HEXFET MOSFET, TSOP-6 | Infineon

IRLTS2242TRPBF - 20V P-Ch HEXFET MOSFET, TSOP-6 | Infineon

IRLTS2242TRPBF ✓ 啟用中

規格比較

參數 IRLTS2242TRPBF IRFR5410TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -20 V -100 V
Continuous Drain Current (ID) at TA=25C -6.9 A —
Power Dissipation (PD) at TA=25C 2.0 W —
On-Resistance RDS(on) max at VGS=-10V 32 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS absolute max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Gate Drive Voltage (logic level) 4.5 V (fully enhanced), 2.5 V capable —
Technology IR MOSFET (HEXFET) HEXFET (advanced process, Gen 5)
封裝 TSOP-6 (Micro 6) TO-252AA (DPAK), surface mount
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55C to +150C (junction) -55 °C to +150 °C (TJ)
Package Thermal Resistance (RthJA) [DATA_NEEDED: RthJA on 1 inch FR-4 PCB] —
MSL 等級 MSL1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
RoHS 狀態 Compliant —
Lead-Free Yes —
無鹵素 Yes —
Continuous Drain Current (ID) at TC = 25 °C — -13 A
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V — 205 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Total Gate Charge (Qg) typ — 70 nC
Power Dissition (PD) at TC = 25 °C — 66 W
Avalanche Rated — Yes (fully avalanche rated)
Lead-Free / RoHS Status — Lead-free, RoHS compliant (PBF suffix)
RDS(on) Test Conditions — VGS = -10 V, ID = -7.0 A

資料表與資源

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