IRS2011STRPBF vs IR2114SSPBF 比較

詳細並排比較 IRS2011STRPBF 由 Infineon 與 IR2114SSPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRS2011STRPBF IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF ✓ 啟用中

規格比較

參數 IRS2011STRPBF IR2114SSPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Half-Bridge Gate Driver —
Configuration High-Side and Low-Side, Independent Channels Half-bridge gate driver
輸出數量 2 2 (high-side + low-side)
Maximum Offset Voltage (High-Side) 200 V —
Output Current (Source / Sink) 1 A typical / 1 A typical —
Propagation Delay (ton/toff) 60 ns typical —
Delay Matching 20 ns maximum —
Logic Input Compatibility 3.3 V CMOS / LSTTL —
Bootstrap Supply Integrated bootstrap diode, floating channel —
Supply Voltage (VCC) 10 V to 20 V —
Negative Transient Tolerance Yes, dV/dt immune —
封裝 8-SOIC (DSO-8) 24-SSOP (7.80 mm wide, 1.75 mm height)
工作溫度 -40 C to +125 C -40 C to +125 C
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant (PBF suffix) Compliant
Suitable Drivers MOSFETs and IGBTs —
拓撲 — Non-inverting
Offset (high-side) Voltage (max) — 600 V
Gate Drive Supply (VCC) — 10 V to 20 V
Logic Supply (VDD) — 10 V to 20 V
Bootstrap Supply (VBS) — 10 V to 25 V (with respect to VS)
Source Current (typ.) — 2 A
Sink Current (typ.) — 3 A
Rise / Fall Time (typ.) — [DATA_NEEDED: rise/fall time]
Propagation Delay (typ.) — 50 ns
Input Logic Compatibility — 3.3 V / 5 V CMOS/LSTTL
UVLO Thresholds — VCC and VBS, internally set
Integrated Bootstrap Diode — Yes
Over-Current Shutdown — Yes (programmable, with FAULT output)

資料表與資源

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