IRS2112STRPBF vs IR2109SPBF 比較

詳細並排比較 IRS2112STRPBF 由 Infineon 與 IR2109SPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRS2112STRPBF IRS2112STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IRS2112STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IRS2112STRPBF ✓ 啟用中

規格比較

參數 IRS2112STRPBF IR2109SPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Configuration Half-bridge (high-side + low-side) —
High-side Offset Voltage (max) 600 V —
Output Source Current (typ) 0.29 A —
Output Sink Current (typ) 0.6 A —
Gate Drive Supply Range (VCC) 10 V to 20 V —
Logic Supply Range (VDD) 3.3 V to 20 V —
Logic Input Compatibility 3.3 V, 5 V, 15 V CMOS/TTL —
Undervoltage Lockout Both channels (VCC and VBS) Yes (VCC)
Propagation Delay (typ) [DATA_NEEDED: propagation delay] —
dV/dt Immunity Yes (negative transient tolerant) —
Shutdown Input Yes (active-low) —
封裝 16-pin SOIC wide-body SOIC-8
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -40 C to +125 C —
MSL 等級 2 (1 year floor life) —
RoHS 狀態 Compliant (Pb-free PBF suffix) Compliant
Driver Configuration — Half-Bridge
Number of Drivers — 2 (high-side + low-side)
High-Side Voltage Tolerance — 600 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.2 A
Sink Current (typical) — 0.35 A
Turn-On Propagation Delay — 150 ns
Turn-Off Propagation Delay — 150 ns
上升時間 — 200 ns
下降時間 — 50 ns
Quiescent VCC Current — 1 mA
Input Logic Compatibility — 3.3 V / 5 V CMOS / TTL
Bootstrap Diode — Integrated
工作接面溫度 — -40 C to +150 C

資料表與資源

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