ISC046N13NM6ATMA1 vs IAUCN04S7N009ATMA1 比較
詳細並排比較 ISC046N13NM6ATMA1 由 Infineon 與 IAUCN04S7N009ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC046N13NM6ATMA1 | IAUCN04S7N009ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 135 V | — |
| Continuous Drain Current (ID) at TA | 17 A | — |
| Continuous Drain Current (ID) at TC | 142 A | — |
| Power Dissipation (PD) at TA | 3 W | — |
| Power Dissipation (PD) at TC | 211 W | — |
| 封裝 / 外殼 | PG-TDSON-8 | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 C to +175 C | — |
| Technology | OptiMOS 6 trench MOSFET | MOSFET (Metal Oxide) |
| Gate Drive (recommended) | 10 V (typical) | — |
| RoHS 狀態 | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Series | — | OptiMOS 7 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 175 A |
| R_DS(on) Max @ V_GS = 10 V | — | 0.96 mΩ |
| Gate Drive Voltage (V_GS) | — | 10 V |
| 封裝 | — | PG-TDSON-8-34 (Surface Mount) |
| 工作溫度 | — | -55C to +175C |
| Qualification | — | AEC-Q101 (Automotive) |
| MSL 等級 | — | 1 |
| Configuration | — | Single N-Channel |
| Supplier Device Package | — | PG-TDSON-8-34 |