K4A4G165WD-BCRC vs H5AN4G6NBJR-PBC 比較
詳細並排比較 K4A4G165WD-BCRC 由 Samsung Electronics 與 H5AN4G6NBJR-PBC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A4G165WD-BCRC | H5AN4G6NBJR-PBC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| 組織 | 256M x 16 | 256M x 16 (268435456 words x 16 bits) |
| Speed Bin | DDR4-2400 (BCRC) | — |
| 供應電壓 | 1.2 V | — |
| 封裝 | FBGA-96 | FBGA-96 (PBGA96), rectangular |
| 安裝類型 | Surface Mount | Surface Mount |
| Process Generation | Samsung D-die | — |
| 介面類型 | DDR4 (double data rate, parallel) | — |
| On-Die Termination (ODT) | Yes | — |
| Data Mask Function | Yes | — |
| Auto Precharge | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range for -C grade] |
| RoHS 狀態 | Lead free / RoHS Compliant | — |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Memory Density | — | 4 Gbit |
| Supply Voltage (VDD) | — | 1.2 V |
| 介面 | — | DDR4 (double data rate, synchronous) |
| Package Code | — | TFBGA |
| Number of Terminals | — | 96 |
| 功能特色 | — | Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC |
| Data Rate / Speed Grade | — | [DATA_NEEDED: speed grade PBC data rate] |
| CAS 延遲 | — | [DATA_NEEDED: CAS latency for PBC speed grade] |
| Process | — | CMOS |
| Lead-Free / Halogen-Free | — | Yes (per family datasheet, Lead-Free & Halogen-Free) |
| Temperature Grade | — | OTHER (per distributor listing) |